Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements

Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge exact values for ITCs is required in order to perform accurate and predictive compact model simulations their performance. Since commercial MOSFETs are capable operating a wide range temperatures, it important know whole temperature operation. Direct measurements with standard equipment possible only at low current levels (i.e. off-state (V gs < V th ) ds > 0 V), however on-state >V also switching In this work, planar MOSFET studied by means calibrated TCAD model, revealing substantial dependence 300-450 K. first approximation, can be explained weaker channel resistance comparison its JFET epitaxial layer resistances. addition, shown that high frequencies stray inductances TO-247-3 package result change extracted ITCs. This effect already notable 1 MHz.